| PART |
Description |
Maker |
| M29KW064E90ZA1T M29KDCL3-32T M29KW064E M29KW064E11 |
From old datasheet system
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory
64MBIT (4MBX16, UNIFORM BLOCK) 3V SUPPLY LIGHTFLASHMEMORY
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M59PW064-100M1 M59PW064-100N1 M59PW064-90M1 |
64 MBIT (4MB X16, UNIFORM BLOCK) 3V SUPPLY LIGHTFLASH™ MEMORY
|
ST Microelectronics
|
| M58WR064EB M58WR064ET M58WR064E-ZBT M58WR064ET80ZB |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
HDR P R 4P PW N 1X4 .100TQ
BERGSTRIP .100CC SR STRAIGHT
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
|
| M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M2 |
4M X 16 FLASH 3V PROM, 70 ns, PDSO48
Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一V电源快闪记忆
Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆
Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆
Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory
Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85
|
NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| M29F010B M29F010B90 M29F010B90P1T 6545 29F010 |
1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory
From old datasheet system
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
1 Mbit 128Kb x8 Uniform Block Single Supply Flash Memory
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| W25X32VSSIZ W25X32VZEIZ W25X16VDAIG |
4 Mbit Uniform Sector, Serial Flash Memory 32M X 1 FLASH 2.7V PROM, PDSO8
4 Mbit Uniform Sector, Serial Flash Memory 16M X 1 FLASH 2.7V PROM, PDIP8
|
Winbond Electronics, Corp.
|
| M28W640FSU M28W640FSU-ZA M28W640FSU-ZAE M28W640FSU |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
